WANG, Sibo; LI , Shiqi; HUANG, Hao. Physical Model Construction and Robust Parameter Inversion for Infrared Interferometric Spectroscopy Measurement of Silicon Carbide Epitaxial Layer Thickness. Transactions on Computer Science and Intelligent Systems Research, [S. l.], v. 12, p. 45–54, 2026. DOI: 10.62051/gf2ng720. Disponível em: https://tcsisr.com/index.php/ojs/article/view/9. Acesso em: 19 apr. 2026.