Wang S, Li S, Huang H. Physical Model Construction and Robust Parameter Inversion for Infrared Interferometric Spectroscopy Measurement of Silicon Carbide Epitaxial Layer Thickness. TCSISR [Internet]. 2026 Apr. 9 [cited 2026 Apr. 19];12:45-54. Available from: https://tcsisr.com/index.php/ojs/article/view/9